Fabrication of Straight Silicon Nanowires and Their Conductive Properties
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چکیده
منابع مشابه
Fabrication of Straight Silicon Nanowires and Their Conductive Properties
Straight Si nanowires (Si NWs) with tens to hundreds of micrometers in length and 40-200 nm in diameter are achieved by annealing a Si substrate coated with metallic Fe. The influences of annealing gas and temperature on the formation of Si NWs are investigated. It is found that the annealing gas has significant impacts on the microstructure of the NWs. By increasing the hydrogen ratio in the f...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2015
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-015-1025-x